BFM520,115 datasheet

Маркировка

BFM520,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BFM520,115 Collector- Emitter Voltage Vceo Max: 8 V Configuration: Dual Continuous Collector Current: 0.07 A Current - Collector (ic) (max): 70mA Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V Dc Current Gain Hfe Max: 60 @ 20mA @ 6V Emitter- Base Voltage Vebo: 2.5 V Frequency - Transition: 9GHz Gain: - ID_COMPONENTS: 1948973 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 9000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 1W Power Dissipation: 1000 mW Transistor Polarity: NPN Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (max): 8V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 8 V Emitter- Base Voltage VEBO: 2.5 V DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 9000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFM520 T/R Other Names: 568-1646-2, 934041410115, BFM520 T/R
Количество страниц

12 шт.
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107,81 KB